complementary silicon plastic power transistors . . . designed for use in general purpose amplifier and switching applications. ? collectoremitter saturation voltage e v ce = 1.2 vdc (max) @ i c = 3.0 adc ? collectoremitter sustaining voltage e v ceo(sus) = 100 vdc (min.) bd241c, bd242c ? high current gain e bandwidth product f t = 3.0 mhz (min) @ i c = 500 madc ? compact to220 ab package ??????????????????????? ??????????????????????? maximum ratings ???????????? ? ?????????? ? ???????????? rating ???? ? ?? ? ???? symbol ??????? ? ????? ? ??????? bd241c bd242c ??? ? ? ? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ??????? ??????? 100 ??? ??? vdc ???????????? ???????????? collectoremitter voltage ???? ???? v ces ??????? ??????? 115 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ??????? ??????? 5.0 ??? ??? vdc ???????????? ???????????? collector current e continuous peak ???? ???? i c ??????? ??????? 3.0 5.0 ??? ??? adc adc ???????????? ???????????? base current ???? ???? i b ??????? ??????? 1.0 ??? ??? adc ???????????? ? ?????????? ? ???????????? total device dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ??????? ? ????? ? ??????? 40 0.32 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??????? ? ????? ? ??????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 62.5 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 3.125 ??? ??? c/w preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 4 1 publication order number: bd241c/d bd241c bd242c 3 ampere power transistors complementary silicon 80, 100 volts 40 watts *on semiconductor preferred device * * case 221a09 to220ab npn pnp style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
bd241c bd242c http://onsemi.com 2 40 30 20 10 0 0 20 40 60 80 100 120 140 160 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts)
bd241c bd242c http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min. ???? ???? max. ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage 1 (i c = 30 madc, i b = 0) bd241c, bd242c ????? ? ??? ? ????? v ceo ??? ? ? ? ??? 100 ???? ? ?? ? ???? ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 60 vdc, i b = 0) bd241c, bd242c ????? ????? i ceo ??? ??? ???? ???? 0.3 ??? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 100 vdc, v eb = 0) bd241c, bd242c ????? ? ??? ? ????? i ces ??? ? ? ? ??? ???? ? ?? ? ???? 200 ??? ? ? ? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics 1 ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 1.0 adc, v ce = 4.0 vdc) (i c = 3.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 10 ???? ? ?? ? ???? ??? ? ? ? ??? ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 3.0 adc, i b = 600 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ???? ? ?? ? ???? 1.2 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 3.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? ???? ? ?? ? ???? 1.8 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current gain bandwidth product 2 (i c = 500 madc, v ce = 10 vdc, f test = 1 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 3.0 ???? ? ?? ? ???? ??? ? ? ? ??? mhz ?????????????????????? ?????????????????????? smallsignal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1 khz) ????? ????? h fe ??? ??? 20 ???? ???? ??? ??? 1 pulse test: pulse width 300 m s, duty cycle 2.0%. 2 f t = |h fe | ? f test . 2.0 0.03 i c , collector current (amp) t, time (s) m 1.0 0.7 0.5 0.3 0.1 0.07 0.02 0.05 0.1 0.3 0.5 0.7 1.0 3.0 t d @ v be(off) = 2.0 v i c /i b = 10 t j = 25 c t r @ v cc = 30 v t r @ v cc = 10 v 0.07 0.03 0.05 figure 2. switching time equivalent circuit figure 3. turnon time approx + 11 v turnon pulse v in 0 t 1 v eb(off) approx - 9.0 v turnoff pulse v in t 3 t 2 approx + 11 v v cc scope r k c jd c eb - 4.0 v t 1 7.0 ns 100 t 2 500 m s t 3 15 ns duty cycle 2.0% v in r l
bd241c bd242c http://onsemi.com 4 figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 z q jc (t) = r(t) r q jc r q jc = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 r(t), transient thermal resistance (normalized) v ce , collector-emitter voltage (volts ) second breakdown limited @ t j 150 c thermal limitation @ t c = 25 c bonding wire limited curves apply below rated v ceo 10 5.0 figure 5. active region safe operating area i c , collector current (amp) 5.0 1.0 0.1 10 20 50 100 bd241c, bd242c 5.0 ms 100 m s 1.0 ms 0.2 2.0 0.5 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c, t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 3.0 0.03 figure 6. turnoff time i c , collector current (amp) t f @ v cc = 30 v t, time (s) m 2.0 1.0 0.5 0.3 0.2 0.1 0.05 0.03 0.05 0.07 0.1 0.2 0.5 1.0 2.0 3.0 t f @ v cc = 10 v i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t s 0.3 0.7 0.07 0.7 300 0.1 figure 7. capacitance v r , reverse voltage (volts) 30 1.0 2.0 3.0 5.0 20 30 40 10 0.2 0.3 0.5 capacitance (pf) 200 100 70 50 t j = + 25 c c eb c cb
bd241c bd242c http://onsemi.com 5 v ce , collector-emitter voltage (volts) 500 0.03 5.0 0.05 0.07 0.1 0.3 0.5 1.0 3.0 100 50 30 10 300 70 t j = 150 c 25 c -55 c v ce = 2.0 v 0.7 7.0 figure 8. dc current gain i c , collector current (amp) 1.4 0.003 figure 9. collector saturation region i c , collector current (amps) 0.01 0.020.03 0.1 0.2 0.5 1.0 2.0 3.0 0.8 0.6 0.4 0.2 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v, voltage (volts) 2.0 1.0 figure 10. aono voltages i b , base current (ma) 0 2.0 5.0 10 20 50 100 200 500 1000 1.6 1.2 0.8 0.4 i c = 0.3 a t j = 25 c 1.0 a 3.0 a h fe , dc current gain +2.5 0.003 figure 11. temperature coefficients i c , collector current (amp) 0.01 0.02 0.05 0.1 0.2 0.3 1.0 2.0 3.0 v , temperature coefficients (mv/ c) q +2.0 +1.5 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 q vb for v be * q vc for v ce(sat) *applies for i c /i b 5.0 t j = - 65 c to + 150 c 10 3 -0.4 figure 12. collector cutoff region v be , base-emitter voltage (volts) 10 2 10 1 10 0 10 -1 , collector current (a) m i c 10 -2 10 -3 -0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 v ce = 30 v t j = 150 c 100 c 25 c reverse forward i ces 10 7 figure 13. effects of baseemitter resistance t j , junction temperature ( c) 20 40 60 80 100 120 140 160 10 6 10 5 10 4 10 3 10 2 r be , external base-emitter resistance (ohms) v ce = 30 v i c = 10 x i ces i c i ces (typical i ces values obtained from figure 12) 0.005 0.3 0.05 1.2 1.0 v be @ v ce = 2.0 v +1.0 0.5 0.005 i c = 2 x i ces
bd241c bd242c http://onsemi.com 6 package dimensions case 221a09 issue ab to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
bd241c bd242c http://onsemi.com 7 notes
bd241c bd242c http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bd241c/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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